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I. Equipment Overview:

Primarily used for 3-6 inch phosphide, phosphide III-V compound semiconductor crystal material single crystal growth process, automatic control system.

II. Equipment Parameters and Types:

III. Key Features and Advantages

1★ Powerful operation functions, Windows interface, touchscreen operation, allowing users to conveniently modify process control parameters and display various process statuses in real-time; equipped with fault self-diagnosis software, significantly reducing maintenance time;

2★ Adopts highly reliable industrial computer + PLC mode for fully automatic control of furnace temperature, gas flow, valves, etc., achieving full process automation;

3★ The program supports manual/automatic operation. After power failure or mid-process shutdown, restart allows temperature ramp-up based on manual process settings, saving process time;

4★ Gas flow control uses high-pressure valves for precise regulation, employing analog signal closed-loop control with strong/weak electrical separation. Gas activation features soft-start functionality;

5★ Equipped with multiple alarm functions and safety protection features;
6★ Constant temperature zone auto-adjustment, enabling accurate control of actual process temperature in reaction tubes;